Estudo e modelagem de dispositivos de chaveamento em alta frequência visando simulação em tempo real.

Abstract

The aim of this study is to model devices with high switching frequency, such as IGBT, thyristors, etc., for real-time simulation. Initially Digital techniques were studied electromagnetic transient simulation based on numerical integration methods, for modeling of basic circuit elements such as inductors, capacitors and resistors. Then, methods have been studied for representing high frequency switches, for real-time simulation, which are based on representations of the key switch states such as inductors and RC-series branches. For analysis of the methods employed, they were initially modeled simple circuits, such as AC-DC converters based on diodes. Subsequently, the model was studied rectifier circuits used in single and three phase comprise thyristor in order to check the key trigger behavior. From the computational implementations of the methods studied, the results were obtained as waveforms and the average values of the output voltage of the rectifier circuits. Conducting a comparative analysis between the results obtained with the waveforms and the expected voltage values, were able to prove the efficiency of the high frequency switch model.