Análise de um retificador de onda completa CMOS na região de inversão fraca.

Abstract

The rectifier is an essential device in the structure of power conditioning circuits applied at low-power. In this work, a study on the full-wave CMOS rectifier was developed, with transistors operating in the Weak Inversion region. The objective is to create a mathematical model and verify through simulations in Cadence Virtuoso the behavior of the output current of the rectifier that feeds the load, for different types of connection of the terminal of the substrate, in an attempt to increase direct current and decrease the reverse current, thus improving its efficiency. Based on previous studies and using the standard 180 nm technology a sine wave signal was applied, a 100 kHz RF signal was simulated with a magnitude of 200 mV at the input of three rectifiers, with the substrate terminal positioned in different places of the circuit. It was concluded that of the three topologies analyzed, the one that presented the best efficiency was the rectifier with the substrate of the PMOS transistor connected to the port. Delivering a power of 32.8 nW with an output voltage of 106.8 mV for a load in the range of 1.45 M to 2.41 M.