CARVALHO, H. E. Q.; http://lattes.cnpq.br/0660638641059604; CARVALHO, Hamilton Emmanuel Querino de.
Resumo:
Currently, there is a continuous demand to design fast dynamic response, compact, high power
density, high efficiency and high switching frequency converters at a reasonable price for many
portable devices, such as notebook adapters, smartphones, etc. Efforts focused on the efficiency
of HEMTs (High Electron Mobility Transistor) switches semiconductor devices such as Power
MOSFET, SiC, GaN leads an increasing in the switching frequencies of power semiconductor
devices. Along with this increase in switching frequency of these devices, there are several
issues with which power electronics occasionally had to face. One of these issues is the losses
by conduction in the electrical circuit and magnetic circuit of the transformers and inductors in
switched converters that operates with a high frequency. This work concentrates on presenting
the important questions about conduction losses and losses in the magnetic material due to the
increase of switching frequency, all based on the vast bibliography in annex.