RAMOS, M. R.; http://lattes.cnpq.br/1728311941410572; RAMOS, Moabe Rodrigues.
Résumé:
The rectifier is an essential device in the structure of power conditioning circuits applied
at low-power. In this work, a study on the full-wave CMOS rectifier was developed,
with transistors operating in the Weak Inversion region. The objective is to create a
mathematical model and verify through simulations in Cadence Virtuoso the behavior of
the output current of the rectifier that feeds the load, for different types of connection
of the terminal of the substrate, in an attempt to increase direct current and decrease
the reverse current, thus improving its efficiency. Based on previous studies and using the
standard 180 nm technology a sine wave signal was applied, a 100 kHz RF signal was
simulated with a magnitude of 200 mV at the input of three rectifiers, with the substrate
terminal positioned in different places of the circuit. It was concluded that of the three
topologies analyzed, the one that presented the best efficiency was the rectifier with the
substrate of the PMOS transistor connected to the port. Delivering a power of 32.8 nW
with an output voltage of 106.8 mV for a load in the range of 1.45 M to 2.41 M.
