Desenvolvimento de um módulo de potência utilizando transistores à base de nitreto de gálio (GaN).

Abstract

This work contains the activities of the intern Luciano Francisco Sousa Alves in Electrical Engineering Laboratory of Grenoble (G2E-Lab), from February 3 to June 27, 2014, together with a team specialized in Power Electronics ( EP) and Safran organizations, CEA LETI, Grenoble INP, CNRS and Joseph Fourier University. The intern was inserted in a project entitled "Development of a Power Module Using GaN Transistors for Aerospace Applications". The intern was tasked to propose two or three printed circuit board design (PCB) for the hosting of GaN transistors. In addition to the PCB proposition, an electromagnetic modelling using InCa3D software was required to allow the choice of the best designs in relation to the Electro-Magnetic Interference (EMI). An initial procedure literature review was developed to enable insertion into the challenges of the project, as well as evaluate the various conventional solutions adopted. To behold the progress of planned activities, one trainee was required familiarization with the softwares InCa3D, Kicad, Simplorer and Glade. At the end of bibliographic studies and software, the trainee was able to propose three PCBs and realize their modelling. Given the results and the criteria defined by the Safran Company, the PCB that showed the best result was chosen to follow the project procedures. This work led to general rules for proposals for PCB designs of power converters using GaN HEMT type components.