Análise do processo de dessorção de filme metálico induzido por luz em superfície dielétrica.

Abstract

In our work we studied the interactions between cesium atoms and a dielectric surface. These interactions are known as the type Vander Waals attractive at long-range and Pauli type, repulsive ats hort distances. This work is divided in to two parts. In the first part we made the analysis of growth of thermal films and we made in the second partthe analysis of films induced by light. Our objetive is understand how is the organization of atoms to form a metallic film on the surface. We describe the procedures used and the experimental apparat us to measure the desorption of films induced by light. We present how each procedure is performed to obtain the measurements and the results of analysis. In this work we present the best known models for adsorption the Langmuir model and the BET model. By analyzing experimental data of thermal absorption we could observe that the data fits in the description of films that grow in multilayers on the surface. We make the analysis of desorption of films induced by light and we get the adsorption energy values. Our main objective is find the value of the adsorption energy for a film induced by light. The values obtained for the adsorption energy to films induced by light (about 0.80 e V) is higher than the energies of physical adsorption (these around 0.40 e V-0.50 e V) and close to the energy of cesium condensation.