Projeto de um amplificador de ganho programável para bluetooth de baixa energia em tecnologia CMOS de 0,13 μm

Abstract

The Programmable Gain Amplifier is a circuit capable of conveniently changing its gain to address various levels of amplification. The circuit which design is described in this work is intended to be within the receiver sub-domain of a Bluetooth Low-Energy system, which finds applications on the Internet of Things industry, finding application on the healthcare field, for instance. The topology proposed in this work is built by combining a source degenerated first stage, a common-source with resistive load second stage, and a transconductance boosting circuit interface to realize an amplifier that has ultra low power consumption (< 104 μW) and occupies an area of 0,004 mm2. Each differential output of the circuit is loaded with 2 pF, value that is the estimated load taking into consideration the loading imposed for the following block of a receiver architecture, i.e. the Analog-to-Digital Converter. Designed in a CMOS 0,13 μm technology and with a supply voltage of 1 V, the simulations on the extracted view of the developed circuit have resulted in maximum power dissipation of 103.1 μW, minimum bandwidth of 7.56 MHz, noise of 32.14 nV/!Hz, and gain range of 2.56 - 19.69 dB, portraying a better performance respective to noise, gain range per stage and area when compared to recent works. The phase margin of the core circuit is no greater than 104.8◦ and no less than 49◦.