Sistemas quânticos com massa espacialmente variável induzidos por defeitos topológicos.

Abstract

The manipulation of the potential acting on the electron in semiconductor surfaces from creating heterostructures that generate variable mass systems, has been of fundamental importance for the development of nanoelectronic devices. These systems can be obtained by doping materials or the inclusion of geometric defects. This study analyzes the effects of the coefficients of reflection and transmission that shifted cylindrical screw carries in nanostructures semiconductor. We concentrated our study in cases where the same resemble a step potential and quantum wells, noting the similarities between the behavior of defects and PNS doped junctions and their influence on the particle momentum.