FREITAS, M. L.; http://lattes.cnpq.br/8725808112376451; FREITAS, Mayara de Lima.
Résumé:
The manipulation of the potential acting on the electron in semiconductor
surfaces from creating heterostructures that generate variable mass systems,
has been of fundamental importance for the development of nanoelectronic
devices. These systems can be obtained by doping materials or the inclusion
of geometric defects. This study analyzes the effects of the coefficients
of reflection and transmission that shifted cylindrical screw carries in nanostructures
semiconductor. We concentrated our study in cases where the same
resemble a step potential and quantum wells, noting the similarities between
the behavior of defects and PNS doped junctions and their influence on the
particle momentum.
